貝爾實驗室顧問
美國國家科學院院士
中研院院士

學歷：
BSEE, University of Illinois （1960）
MSEE, University of Illinois（1961）
Ph. D., University of Illinois（1968）

經歷：
Member of Technical Staff, Bell Laboratories, Murray Hill, New Jersey(1968-1984)
Department Head, Electronic and Photonics, AT & T Bell Laboratories(1984-1987)
Director, Materials Processing Research Laboratory, AT & T Bell Laboratories(1987-1990)
Director, Semiconductor Research Lab., Bell Labs., Lucent Technologies(1990-)
Vice President, Semiconductor Research Lab., Bell Labs., Lucent Technologies(2000-)

榮譽：
International Prize for New Materials of the American Physical Society（1982）
Solid State Science and Technology Medal of The Electrochemical Society（1987）
World Material Congress Award of ASM International（1988）
Gaede - Langmuir Award of the American Vacuum Society（1988）
International Crystal Growth Award of the American Association of Crystal Growth（1990）
Academician, Academia Sinica, R. O. C.（1990）
United States National Medal of Science by President Clinton（1993）
Von Hippel Award of the Material Research Society（1994）
The Medal of Honor of IEEE（1994）
Elliott Cresson Medal of the Franklin Institute（1995）
Computer and Communications Prize of the C & C Foundation, Japan（1995）
W. E. Lamb Medal for Laser Science And Quantum Optics（1999）

研究領域：
Electronic and Photonic Materials and Devices

I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments. MBE prepares thin films one atomic layer at a time, with exceptional control at atomic dimensions and further showed that these films could be the basis of devices with never before realized electrical and optical properties.

我將介紹分子束磊晶技術（ MBE ）的發明經過、現況、和將來的發展。 MBE 技術用來製備逐次堆疊原子層的薄膜，可以非常精確地控制至原子的尺寸。我也將近一步闡述這些薄膜可用之以設計電子元件，具有前所未見的電學和光學性質。